Thursday, 28. October 2021     Home | News | Our Company | Contact | Collaborations | Links | Sitemap   
Price List:





 
Cryogenic Amplifiers

FT-ICR  ·  Shot-Noise  ·  QPC  ·  STM/AFM

We offer customized cryogenic amplifiers e.g. for STM/AFM applications, FT-ICR ion traps and QPC measurements. Our cryogenic low noise amplifiers are developed with focus on small shot noise signals.


Cryogenic Super Low Noise Amplifier CX-4

CX-4 - Perspective View

The new CX-4 is a ultra low noise FET preamplifier, operating in room temperature down to deep cryogenic environments (T = 4.2K, liquid Helium). It is an improved version of its predecessor NexGen3 KC05.

Key Features:
  • Ultra Low Input Noise (typ. 0.31 nV/√Hz @ 1 MHz)
  • Frequency Range 1 kHz to 4 MHz
  • Input Impedance approx. 10 MOhm
  • Small Size and tiny thermal load of only 300 μWatt
For more details please refer to the data sheet: pdf, 2.6 MB

DC to 1GHz Broadband Cryogenic Buffer Amplifier HF-STM 1

HF-STM 1 - Perspective View HF-STM 1 - Front View HF-STM 1 - Side View

The new HF-STM 1 cryogenic amplifier is a device intended for the detection of small currents at DC to high frequencies, which are e.g. created by STM tips (scanning tunneling microscopy). The input current flows DC-related through a Bias-T and the high frequency part is buffered and presented at a low impedance output (nom. 50 Ω). The device operating range spans room temperature down to deep cryogenic environments (T = 4.2 K, liquid Helium).

Key Features:
  • Cryogenic High Impedance Buffer up to 1 GHz
  • Wide Temperature Range T = 300 K down to T = 4.2 K
  • Low Outgassing UHV Operation
  • Small Size, Small Heat Load
For more details please refer to the data sheet: pdf, 1.83 MB


Cryogenic CMOS Buffer Amplifier BUF 0.12

BUF 0.12 - Perspective View BUF 0.12 - Top View BUF 0.12 - Side View

The new BUF 0.12 device is a CMOS-based precision buffer amplifier, operating in room temperature down to deep cryogenic environments (T = 4.2K, liquid Helium). The BUF 0.12 covers a frequency range from 0Hz to 0.12MHz (in terms of max. 1% voltage deviation), features a very high input impedance and has an input voltage noise in the order of 5nV/√Hz. The device is based on highly-doped Silicon CMOS technology, which allows for operation over a very wide temperature range from room temperature to liquid Helium temperature, provided the device is located in a vacuum cryostat.

Key Features:
  • Precision Voltage Buffer DC 0Hz to 120kHz
  • Wide Temperature Range T = 300K down to T = 4.2K
  • Selectable Input Impedance
For more details please refer to the data sheet: pdf, 1.91 MB


FTICR-3: 2-Channel Low Noise FT-ICR Preamplifier

The FTICR-3 is a 2-channel very sensitive voltage preamplifier for low-noise and high-impedance applications.
The preamplifier is implemented as printboard version and intended for direct mounting inside a vacuum setup.

Key Features:
  • 2 Independend Channels
  • Designed as Front End Stage for FT-ICR Traps
  • 100K to 300K operating range
  • Wide Frequency Range: 0.7 kHz to 30 MHz, customizable
  • Low Noise Design
  • Baking in Vacuum up to 125 °C
For more details please refer to the short form data sheet: pdf, 3.30 MB
FTICR-3: 2-Channel Low Noise FT-ICR Preamplifier
FTICR-3: 2-Channel Low Noise FT-ICR Preamplifier


Customized single channel version of our NexGen3 amplifiers

3rd generation drift-compensated GaAs-preamplifier     Amplifier stage, for use at 77K.
Pictures: left: our 3rd generation drift-compensated GaAs-
preamplifier shows outstanding noise performance and
versatility. It's e.g. in use at the KBSI - Korea Basic Science Institute. Short form data sheet: pdf, 280 KB
right: amplifier stage, for use at 77K.
single channel version NexGen3 KC05c
Picture: single channel version NexGen3 KC05c
Our 3rd generation drift-compensated GaAs-preamplifier shows outstanding noise performance and versatility.
For more details please refer to the short form data sheet: pdf, 280 KB


Dual Cryogenic Ultra Low Noise RF-Amplifier HFC 50 D / E

obsolete, only a remaining quantity
HFC 50 HFC 50 - Perspective View HFC 50 - Top View HFC 50 - Side View

The HFC 50 D/E represents an ultra low noise 2-channel FET preamplifier, operating in room temperature down to deep cryogenic environments (T = 4.2K, liquid Helium). It is an improved version of the predecessor version HFC 50 B/C. Version HFC 50 E equals version HFC 50 D, but offers an additional (uncalibrated) silicon temperature diode for temperature monitoring.

The device has been developed in close collaboration with a  University group for low temperature shot noise measurements on quantum point contacts beyond the 1/f noise kink in the noise spectra.

Improvements:
  • substantially improved voltage and current noise floor: 0.30nV/√Hz, 17fA/√Hz @ 1MHz, T = 4K
  • outstanding low 1/f noise
  • improved channel matching
Key Features:
  • Ultra Low Input Noise (typ. 0.25nV/√Hz @ 10MHz)
  • Frequency Range 160kHz to 50MHz
  • Input Impedance approx. 10MOhm
  • Dual Channel Version with Adjustable Channel matching
  • Output Impedance 50 Ohm or 75 Ohm
  • Wide Temperature Range T = 300K down to T = 4.2K
  • Very Small Size
For more details please refer to the data sheet of the HFC 50 D/E: pdf, 3.05 MB

Data sheet of the predecessor version HFC 50 B/C: pdf, 2.90 MB


 
Status: 22.10.2021 © 2002-2021 stahl-electronics.com  |  Legal Notice  |  Privacy Policy to the top