stahl-electronics.com - Cryogenic Amplifiers

FT-ICR · Shot-Noise · QPC · STM/AFM

We offer customized cryogenic amplifiers e.g. for STM/AFM applications, FT-ICR ion traps and QPC measurements. Our cryogenic low noise amplifiers are developed with focus on small shot noise signals.

Cryogenic Super Low Noise Amplifier CX-4

The new CX-4 is a ultra low noise FET preamplifier, operating in room temperature down to deep cryogenic environments (T = 4.2K, liquid Helium). It is an improved version of its predecessor NexGen3 KC05.

Key Features:

Ultra Low Input Noise (typ. 0.31 nV/√Hz @ 1 MHz)
Frequency Range 1 kHz to 4 MHz
Input Impedance approx. 10 MOhm
Small Size and tiny thermal load of only 300 μWatt

For more details please refer to the data sheet:

pdf, 2.8 MB

The development of CX-4 has received funding from the European Union's Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie grant agreement No 721559.

DC to 1GHz Broadband Cryogenic Buffer Amplifier HF-STM 1

The new HF-STM 1 cryogenic amplifier is a device intended for the detection of small currents at DC to high frequencies, which are e.g. created by STM tips (scanning tunneling microscopy). The input current flows DC-related through a Bias-T and the high frequency part is buffered and presented at a low impedance output (nom. 50 Ω). The device operating range spans room temperature down to deep cryogenic environments (T = 4.2 K, liquid Helium).

Key Features:

Cryogenic High Impedance Buffer up to 1 GHz
Wide Temperature Range T = 300 K down to T = 4.2 K
Low Outgassing UHV Operation
Small Size, Small Heat Load

For more details please refer to the data sheet:

pdf, 1.8 MB

Cryogenic CMOS Buffer Amplifier BUF 0.12

The new BUF 0.12 device is a CMOS-based precision buffer amplifier, operating in room temperature down to deep cryogenic environments (T = 4.2K, liquid Helium). The BUF 0.12 covers a frequency range from 0Hz to 0.12MHz (in terms of max. 1% voltage deviation), features a very high input impedance and has an input voltage noise in the order of 5nV/√Hz. The device is based on highly-doped Silicon CMOS technology, which allows for operation over a very wide temperature range from room temperature to liquid Helium temperature, provided the device is located in a vacuum cryostat.

Key Features:

Precision Voltage Buffer DC 0Hz to 120kHz
Wide Temperature Range T = 300K down to T = 4.2K
Selectable Input Impedance

For more details please refer to the data sheet:

pdf, 1.91 MB

FTICR-3: 2-Channel Low Noise FT-ICR Preamplifier

The FTICR-3 is a 2-channel very sensitive voltage preamplifier for low-noise and high-impedance applications.
The preamplifier is implemented as printboard version and intended for direct mounting inside a vacuum setup.

Key Features:

2 Independend Channels
Designed as Front End Stage for FT-ICR Traps
100K to 300K operating range
Wide Frequency Range: 0.7 kHz to 30 MHz, customizable
Low Noise Design
Baking in Vacuum up to 125 °C

For more details please refer to the short form data sheet:

pdf, 3.30 MB

FTICR-3: 2-Channel Low Noise FT-ICR Preamplifier

Customized single channel version of our NexGen3 amplifiers

Pictures: left: our 3rd generation drift-compensated GaAs-
preamplifier shows outstanding noise performance and
versatility. It's e.g. in use at the

KBSI - Korea Basic Science Institute. Short form data sheet: pdf, 280 KB
right: amplifier stage, for use at 77K.

Picture: single channel version NexGen3 KC05c

Our 3rd generation drift-compensated GaAs-preamplifier shows outstanding noise performance and versatility.
For more details please refer to the short form data sheet:

pdf, 280 KB

Dual Cryogenic Ultra Low Noise RF-Amplifier HFC 50 D / E

obsolete, only a remaining quantity

The HFC 50 D/E represents an ultra low noise 2-channel FET preamplifier, operating in room temperature down to deep cryogenic environments (T = 4.2K, liquid Helium). It is an improved version of the predecessor version HFC 50 B/C. Version HFC 50 E equals version HFC 50 D, but offers an additional (uncalibrated) silicon temperature diode for temperature monitoring.

The device has been developed in close collaboration with a University group for low temperature shot noise measurements on quantum point contacts beyond the 1/f noise kink in the noise spectra.

Improvements:

substantially improved voltage and current noise floor: 0.30nV/√Hz, 17fA/√Hz @ 1MHz, T = 4K
outstanding low 1/f noise
improved channel matching

Key Features:

Ultra Low Input Noise (typ. 0.25nV/√Hz @ 10MHz)
Frequency Range 160kHz to 50MHz
Input Impedance approx. 10MOhm
Dual Channel Version with Adjustable Channel matching
Output Impedance 50 Ohm or 75 Ohm
Wide Temperature Range T = 300K down to T = 4.2K
Very Small Size

For more details please refer to the data sheet of the HFC 50 D/E:

pdf, 3.05 MB

Data sheet of the predecessor version HFC 50 B/C:

pdf, 2.90 MB