stahl-electronics.com - Cryogenic Amplifiers

FT-ICR · Shot-Noise · QPC · STM/AFM

We offer customized cryogenic amplifiers e.g. for STM/AFM applications, FT-ICR ion traps and QPC measurements. Our cryogenic low noise amplifiers are developed with focus on small shot noise signals.

Cryogenic Super Low Noise Amplifier CX-4

The new CX-4 is a ultra low noise FET preamplifier, operating in room temperature down to deep cryogenic environments (T = 4.2K, liquid Helium). It is an improved version of its predecessor NexGen3 KC05.

Key Features:

Ultra Low Input Noise (typ. 0.31 nV/√Hz @ 1 MHz)
Frequency Range 1 kHz to 4 MHz
Input Impedance approx. 10 MOhm
Small Size and tiny thermal load of only 300 μWatt

For more details please refer to the data sheet:

pdf, 2.35 MB

Dual Cryogenic Ultra Low Noise RF-Amplifier HFC 50 D / E

The HFC 50 D/E represents an ultra low noise 2-channel FET preamplifier, operating in room temperature down to deep cryogenic environments (T = 4.2K, liquid Helium). It is an improved version of the predecessor version HFC 50 B/C. Version HFC 50 E equals version HFC 50 D, but offers an additional (uncalibrated) silicon temperature diode for temperature monitoring.

The device has been developed in close collaboration with a University group for low temperature shot noise measurements on quantum point contacts beyond the 1/f noise kink in the noise spectra.

Improvements:

substantially improved voltage and current noise floor: 0.30nV/√Hz, 17fA/√Hz @ 1MHz, T = 4K
outstanding low 1/f noise
improved channel matching

Key Features:

Ultra Low Input Noise (typ. 0.25nV/√Hz @ 10MHz)
Frequency Range 160kHz to 50MHz
Input Impedance approx. 10MOhm
Dual Channel Version with Adjustable Channel matching
Output Impedance 50 Ohm or 75 Ohm
Wide Temperature Range T = 300K down to T = 4.2K
Very Small Size

For more details please refer to the data sheet of the HFC 50 D/E:

pdf, 3.05 MB

Data sheet of the predecessor version HFC 50 B/C:

pdf, 2.90 MB

DC to 1GHz Broadband Cryogenic Buffer Amplifier HF-STM 1

The new HF-STM 1 cryogenic amplifier is a device intended for the detection of small currents at DC to high frequencies, which are e.g. created by STM tips (scanning tunneling microscopy). The input current flows DC-related through a Bias-T and the high frequency part is buffered and presented at a low impedance output (nom. 50 Ω). The device operating range spans room temperature down to deep cryogenic environments (T = 4.2 K, liquid Helium).

Key Features:

Cryogenic High Impedance Buffer up to 1 GHz
Wide Temperature Range T = 300 K down to T = 4.2 K
Low Outgassing UHV Operation
Small Size, Small Heat Load

For more details please refer to the data sheet:

pdf, 1.83 MB

Cryogenic CMOS Buffer Amplifier BUF 0.12

The new BUF 0.12 device is a CMOS-based precision buffer amplifier, operating in room temperature down to deep cryogenic environments (T = 4.2K, liquid Helium). The BUF 0.12 covers a frequency range from 0Hz to 0.12MHz (in terms of max. 1% voltage deviation), features a very high input impedance and has an input voltage noise in the order of 5nV/√Hz. The device is based on highly-doped Silicon CMOS technology, which allows for operation over a very wide temperature range from room temperature to liquid Helium temperature, provided the device is located in a vacuum cryostat.

Key Features:

Precision Voltage Buffer DC 0Hz to 120kHz
Wide Temperature Range T = 300K down to T = 4.2K
Selectable Input Impedance

For more details please refer to the data sheet:

pdf, 4.14 MB

2-Channel Amplifier & Cryogenic Biasing Module A3 / A7 / RTA50

RTA50 amplifier unit - Sloped View - please click image to enlarge

RTA50 amplifier unit - Front View - please click image to enlarge

RTA50 amplifier unit - Rear View - please click image to enlarge

The A3, A7 and RTA50 amplifier units consist of three main blocks, which are useful to operate cryogenic preamplifiers. The supply section feeds a cryogenic device with stable supply voltage. Another section provides low noise post-amplification of the signals coming from the cryogenic stage. The third section allows monitoring the biasing conditions (DC values) and gives assistance in analysing possible malfunctions and cabling problems in the inaccessible cryogenic region. The device is housed inside a shielded aluminium case, which needs to be powered up by an external +/-5V supply.

Key Features:

Analog Room Temperature Interface for Cryogenic Amplifiers
Creates and Monitors Required Supply Lines
Microcontroller-Assisted Analysis of Possible Malfunctions
Dual-Channel or Differential-to-Single Ended Signal Conversion

For more details please refer to the data sheet:

pdf, 2.54 MB

FTICR-3: 2-Channel Low Noise FT-ICR Preamplifier

The FTICR-3 is a 2-channel very sensitive voltage preamplifier for low-noise and high-impedance applications.
The preamplifier is implemented as printboard version and intended for direct mounting inside a vacuum setup.

Key Features:

2 Independend Channels
Designed as Front End Stage for FT-ICR Traps
100K to 300K operating range
Wide Frequency Range: 0.7 kHz to 30 MHz, customizable
Low Noise Design
Baking in Vacuum up to 125 °C

For more details please refer to the short form data sheet:

pdf, 3.30 MB

FTICR-3: 2-Channel Low Noise FT-ICR Preamplifier

Customized single channel version of our NexGen3 amplifiers

Pictures: left: our 3rd generation drift-compensated GaAs-
preamplifier shows outstanding noise performance and
versatility. It's e.g. in use at the

KBSI - Korea Basic Science Institute. Short form data sheet: pdf, 280 KB
right: amplifier stage, for use at 77K.

Picture: single channel version NexGen3 KC05c

Our 3rd generation drift-compensated GaAs-preamplifier shows outstanding noise performance and versatility.
For more details please refer to the short form data sheet:

pdf, 280 KB