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Cryogenic Amplifiers
FT-ICR · Shot-Noise · QPC · STM/AFM
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We offer customized cryogenic amplifiers e.g. for STM/AFM applications, FT-ICR ion traps and
QPC measurements. Our cryogenic low noise amplifiers are developed with focus on small
shot noise signals.
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Cryogenic Super Low Noise Amplifier CX-4
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The new CX-4 is a ultra low noise FET preamplifier, operating in room temperature
down to deep cryogenic environments (T = 4.2K, liquid Helium).
It is an improved version of its predecessor NexGen3 KC05.
Key Features:
- Ultra Low Input Noise (typ. 0.31 nV/√Hz @ 1 MHz)
- Frequency Range 1 kHz to 4 MHz
- Input Impedance approx. 10 MOhm
- Small Size and tiny thermal load of only 300 μWatt
For more details please refer to the data sheet:
 pdf, 2.35 MB
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Dual Cryogenic Ultra Low Noise RF-Amplifier HFC 50 D / E
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The HFC 50 D/E represents an ultra low noise 2-channel FET preamplifier, operating in room
temperature down to deep cryogenic environments (T = 4.2K, liquid Helium). It is an
improved version of the predecessor version HFC 50 B/C.
Version HFC 50 E equals version HFC 50 D, but offers an additional
(uncalibrated) silicon temperature diode for temperature monitoring.
The device has been developed in close collaboration with a
 University group
for low temperature shot noise measurements on quantum point contacts beyond
the 1/f noise kink in the noise spectra.
Improvements:
- substantially improved voltage and current noise floor:
0.30nV/√Hz, 17fA/√Hz @ 1MHz, T = 4K
- outstanding low 1/f noise
- improved channel matching
Key Features:
- Ultra Low Input Noise (typ. 0.25nV/√Hz @ 10MHz)
- Frequency Range 160kHz to 50MHz
- Input Impedance approx. 10MOhm
- Dual Channel Version with Adjustable Channel matching
- Output Impedance 50 Ohm or 75 Ohm
- Wide Temperature Range T = 300K down to T = 4.2K
- Very Small Size
For more details please refer to the data sheet of the HFC 50 D/E:
pdf, 3.05 MB
Data sheet of the predecessor version HFC 50 B/C:
pdf, 2.90 MB
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DC to 1GHz Broadband Cryogenic Buffer Amplifier HF-STM 1
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The new HF-STM 1 cryogenic amplifier is a device intended for the detection of small currents at DC to high
frequencies, which are e.g. created by STM tips (scanning tunneling microscopy). The input current
flows DC-related through a Bias-T and the high frequency part is buffered and presented at a low
impedance output (nom. 50 Ω). The device operating range spans room temperature down to deep
cryogenic environments (T = 4.2 K, liquid Helium).
Key Features:
- Cryogenic High Impedance Buffer up to 1 GHz
- Wide Temperature Range T = 300 K down to T = 4.2 K
- Low Outgassing UHV Operation
- Small Size, Small Heat Load
For more details please refer to the data sheet:
pdf, 1.83 MB
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Cryogenic CMOS Buffer Amplifier BUF 0.12
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The new BUF 0.12 device is a CMOS-based precision buffer amplifier, operating in room temperature down
to deep cryogenic environments (T = 4.2K, liquid Helium). The BUF 0.12 covers a frequency range
from 0Hz to 0.12MHz (in terms of max. 1% voltage deviation), features a very high input impedance
and has an input voltage noise in the order of 5nV/√Hz.
The device is based on highly-doped Silicon CMOS
technology, which allows for operation over a very wide temperature range from room temperature to
liquid Helium temperature, provided the device is located in a vacuum cryostat.
Key Features:
- Precision Voltage Buffer DC 0Hz to 120kHz
- Wide Temperature Range T = 300K down to T = 4.2K
- Selectable Input Impedance
For more details please refer to the data sheet:
pdf, 1.91 MB
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2-Channel Amplifier & Cryogenic Biasing Module A3 / A7 / RTA50
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The A3, A7 and RTA50 amplifier units consist of three main blocks, which are useful to
operate cryogenic preamplifiers. The supply section feeds a cryogenic device with stable
supply voltage. Another section provides low noise post-amplification of the signals
coming from the cryogenic stage. The third section allows monitoring the biasing
conditions (DC values) and gives assistance in analysing possible malfunctions and
cabling problems in the inaccessible cryogenic region.
The device is housed inside a shielded aluminium case, which needs to be powered up by
an external +/-5V supply.
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Key Features:
- Analog Room Temperature Interface for Cryogenic Amplifiers
- Creates and Monitors Required Supply Lines
- Microcontroller-Assisted Analysis of Possible Malfunctions
- Dual-Channel or Differential-to-Single Ended Signal Conversion
For more details please refer to the data sheet:
pdf, 2.54 MB |
FTICR-3: 2-Channel Low Noise FT-ICR Preamplifier
The FTICR-3 is a 2-channel very sensitive voltage preamplifier for low-noise and high-impedance applications.
The preamplifier is implemented as printboard version and intended for direct
mounting inside a vacuum setup.
Key Features:
- 2 Independend Channels
- Designed as Front End Stage for FT-ICR Traps
- 100K to 300K operating range
- Wide Frequency Range: 0.7 kHz to 30 MHz, customizable
- Low Noise Design
- Baking in Vacuum up to 125 °C
For more details please refer to the short form data sheet:
pdf, 3.30 MB
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FTICR-3: 2-Channel Low Noise FT-ICR Preamplifier
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Customized single channel version of our NexGen3 amplifiers
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Pictures:
left: our 3rd generation drift-compensated GaAs-
preamplifier shows outstanding noise performance and
versatility. It's e.g. in use at the 
KBSI - Korea Basic Science Institute.
Short form data sheet: pdf, 280 KB
right: amplifier stage, for use at 77K.
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Picture:
single channel version NexGen3 KC05c
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Our 3rd generation drift-compensated GaAs-preamplifier shows outstanding noise performance
and versatility.
For more details please refer to the short form data sheet:
pdf, 280 KB
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pdf, 1.31 MB
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