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Cryogenic Amplifiers

FT-ICR  ·  Shot-Noise  ·  QPC  ·  STM/AFM

We offer customized cryogenic amplifiers e.g. for STM/AFM applications, FT-ICR ion traps and QPC measurements. Our cryogenic low noise amplifiers are developed with focus on small shot noise signals.


Dual Cryogenic Ultra Low Noise RF-Amplifier HFC 50 D / E

HFC 50 HFC 50 - Perspective View HFC 50 - Top View HFC 50 - Side View

The HFC 50 D/E represents an ultra low noise 2-channel FET preamplifier, operating in room temperature down to deep cryogenic environments (T = 4.2K, liquid Helium). It is an improved version of the predecessor version HFC 50 B/C. Version HFC 50 E equals version HFC 50 D, but offers an additional (uncalibrated) silicon temperature diode for temperature monitoring.

The device has been developed in close collaboration with a  University group for low temperature shot noise measurements on quantum point contacts beyond the 1/f noise kink in the noise spectra.

Improvements:
  • substantially improved voltage and current noise floor: 0.30nV/√Hz, 17fA/√Hz @ 1MHz, T = 4K
  • outstanding low 1/f noise
  • improved channel matching
Key Features:
  • Ultra Low Input Noise (typ. 0.25nV/√Hz @ 10MHz)
  • Frequency Range 160kHz to 50MHz
  • Input Impedance approx. 10MOhm
  • Dual Channel Version with Adjustable Channel matching
  • Output Impedance 50 Ohm or 75 Ohm
  • Wide Temperature Range T = 300K down to T = 4.2K
  • Very Small Size
For more details please refer to the data sheet of the HFC 50 D/E: pdf, 3.36 MB

Data sheet of the predecessor version HFC 50 B/C: pdf, 2.90 MB


NexGen3 KC 05 du modules

KC 05 du V.09 - Side View KC 05 du V.09 - Top View KC 05 du V.09 - Perspective View

The KC 05 du module comprises 2 highly sensitive voltage preamplifier channels, and is intended for lowtemperature, low-noise applications. The circuit can be used directly inside a cryogenic vacuum setup. GaAs (Gallium-Arsenide)-FET technology allows for operation in strong magnetic fields up to several Tesla, as they are present in NMR, FT-ICR or solid state research applications.

Key Features:
  • Ultra Low Input Noise (typ. 0.4nV/√Hz @ 1MHz, T=4K)
  • Frequency Range 0.75kHz to 5MHz
  • 2-Channel Device
  • Input Impedance approx. 25MOhm
  • Amplifaction Factor typ. 25 V/V
  • Very low noise version:
    The device version V.09 (Version 2009) features a smaller case size, lowered voltage- and current noise and a further increased input impedance than the older versions. The usable temperature range covers the whole span from room temperature (300K) to liquid Helium temperature (4.2K).
    For more details please refer to the data sheet: pdf, 6.80 MB

  • Super low noise version:
    The device version V.2014 (year 2014) supersedes the former version KC 05 V.09 (Version 2009) and features significantly improved voltage- and current noise, lower input capacitance and a further increased amplification factor. The usable temperature range covers the whole span from room temperature (300K) to liquid Helium temperature (4.2K).
    For more details please refer to the data sheet: pdf, 3.20 MB


Cryogenic CMOS Buffer Amplifier BUF 0.12

BUF 0.12 - Perspective View BUF 0.12 - Top View BUF 0.12 - Side View

The new BUF 0.12 device is a CMOS-based precision buffer amplifier, operating in room temperature down to deep cryogenic environments (T = 4.2K, liquid Helium). The BUF 0.12 covers a frequency range from 0Hz to 0.12MHz (in terms of max. 1% voltage deviation), features a very high input impedance and has an input voltage noise in the order of 5nV/√Hz. The device is based on highly-doped Silicon CMOS technology, which allows for operation over a very wide temperature range from room temperature to liquid Helium temperature, provided the device is located in a vacuum cryostat.

Key Features:
  • Precision Voltage Buffer DC 0Hz to 120kHz
  • Wide Temperature Range T = 300K down to T = 4.2K
  • Selectable Input Impedance
For more details please refer to the data sheet: pdf, 4.14 MB


2-Channel Amplifier & Cryogenic Biasing Module A3 / A7 / RTA50

RTA50 amplifier unit - Sloped View - please click image to enlarge RTA50 amplifier unit - Front View - please click image to enlarge RTA50 amplifier unit - Rear View - please click image to enlarge
The A3, A7 and RTA50 amplifier units consist of three main blocks, which are useful to operate cryogenic preamplifiers. The supply section feeds a cryogenic device with stable supply voltage. Another section provides low noise post-amplification of the signals coming from the cryogenic stage. The third section allows monitoring the biasing conditions (DC values) and gives assistance in analysing possible malfunctions and cabling problems in the inaccessible cryogenic region. The device is housed inside a shielded aluminium case, which needs to be powered up by an external +/-5V supply.
Key Features:
  • Analog Room Temperature Interface for Cryogenic Amplifiers
  • Creates and Monitors Required Supply Lines
  • Microcontroller-Assisted Analysis of Possible Malfunctions
  • Dual-Channel or Differential-to-Single Ended Signal Conversion
For more details please refer to the data sheet: pdf, 2.63 MB


Customized single channel version of our NexGen3 amplifiers

3rd generation drift-compensated GaAs-preamplifier     Amplifier stage, for use at 77K.
Pictures: left: our 3rd generation drift-compensated GaAs-
preamplifier shows outstanding noise performance and
versatility. It's e.g. in use at the KBSI - Korea Basic Science Institute. Short form data sheet: pdf, 280 KB
right: amplifier stage, for use at 77K.
single channel version NexGen3 KC05c
Picture: single channel version NexGen3 KC05c
Our 3rd generation drift-compensated GaAs-preamplifier shows outstanding noise performance and versatility.
For more details please refer to the short form data sheet: pdf, 280 KB

 
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